pnp 2n4030 ? 2n4031 ? 2n4032 ? 2N4033 comset semiconductors 1/3 they are silicon planar epitaxial pnp trans istors mounted in to-39 metal package. they are intended for large signal, low noise industrial applications. compliance to rohs. absolute maximum ratings symbol ratings value unit 2n4030 60 2n4031 80 2n4032 60 -v cbo collector-base voltage i e = 0 2N4033 80 v 2n4030 60 2n4031 80 2n4032 60 -v ceo collector-emitter voltage i b = 0 2N4033 80 v 2n4030 2n4031 2n4032 -v ebo emitter-base voltage i c = 0 2N4033 5 v 2n4030 2n4031 2n4032 -i c collector current 2N4033 1 a @ t case = < 25 4 p tot @ t amb = < 2 5 0.8 watts t j junction temperature 200 c t stg storage temperature range -65 to +200 c thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction-case 44 k/ w r thj-amb thermal resistance, junction-ambient 218 k/ w g g e e n n e e r r a a l l p p u u r r p p o o s s e e a a m m p p l l i i f f i i e e r r s s a a n n d d s s w w i i t t c c h h e e s s
pnp 2n4030 ? 2n4031 ? 2n4032 ? 2N4033 comset semiconductors 2 / 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i e = 0 ;v cb = 50 v 2n4030 i e = 0 ;v cb = 60 v 2n4031 - - 50 na v cb =50 v 2n4030 i e = 0 ; v t amb = 150c v cb =60 v 2n4031 - - 50 a i e = 0 ;v cb = 50 v 2n4032 i e = 0 ;v cb = 60 v 2N4033 - - 50 na v cb =50 v 2n4032 -i cbo collector ? cutoff current i e = 0 ; v t amb = 150c v cb =60 v 2N4033 - - 50 a 2n4030 60 - - 2n4031 80 - - 2n4032 60 - - -v cb0 collector ? base breakdown voltage -i c = 10 a i e = 0 2N4033 80 - - v 2n4030 60 - - 2n4031 80 - - 2n4032 60 - - -v ce0 (*) collector ? emitter breakdown voltage -i c = 10 ma i b = 0 2N4033 80 - - v 2n4030 2n4031 2n4032 -v eb0 emitter ? base breakdown voltage -i e = 10 a i c = 0 2N4033 5 - - v -i c = 150 ma , -i b = 15 ma - - 0.15 -i c = 500 ma , -i b = 50 ma - - 0.5 2n4030 -v ce(sat) (*) collector-emitter saturation voltage -i c = 1 a, -i b = 100 ma 2n4032 - - 1 -i c = 150 ma , -i b = 15 ma - - 0.9 -i c = 500 ma , -i b = 50 ma - - 1.1 2n4030 -v be (*) base-emitter saturation voltage -i c = 1 a, -i b = 100 ma 2n4032 - - 1.2 v 2n4030 2n4031 30 - - 2n4032 -i c = 100 a , -v ce = 5 v 2N4033 75 - - 2n4030 2n4031 40 - 120 2n4032 -i c = 100 ma , -v ce = 5v 2N4033 100 - 300 2n4030 2n4031 25 - - 2n4032 -i c = 500 ma , -v ce = 5v 2N4033 70 - - 2n4030 15 - - 2n4031 10 - - 2n4032 40 - - -i c = 1 a , -v ce = 5 v 2N4033 25 - - 2n4030 2n4031 15 - - 2n4032 h fe (*) dc current gain -i c = 100 ma , -v ce = 5v t amb = -55c 2N4033 40 - - -
pnp 2n4030 ? 2n4031 ? 2n4032 ? 2N4033 comset semiconductors 3 / 3 symbol ratings test condition(s) min typ mix unit 2n4030 2n4031 100 - 400 2n4032 f t transition frequency -i c = 50 ma , -v ce = 10 v f = 100 mh z 2N4033 150 - 500 mh z c ebo emitter ? base capacitance i c = 0 ; -v eb = 0.5 v f = 1 mh z - - 110 pf c cbo collector ? base capacitance i e = 0 ; -v cb = 10v f = 1 mh z - - 20 pf t s storage times -i c =500 ma ; -v cc = 30v -i b1 = -i b1 = 50 ma - - 350 ns t f fall times -i c =500 ma ; -v cc = 30v -i b1 = -i b1 = 50 ma - - 50 ns t on turn-on times -i c =500 ma ; -v cc = 30v -i b1 = -i b1 = 50 ma - - 100 ns (*) pulsed : pulse duration = 300s, duty cycle = 1% mechanical data case to-39 information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice. dimensions (mm) min typ max a 12.7 - - b - - 0.49 d - - 6.6 e - - 8.5 f - - 9.4 g 5.08 - - h - - 1.2 i - - 0.9 l 45 - - pin 1 : emitter pin 2 : base case : collector
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